In the present entry, an Angelov MESFET model built for the QUCS Studio CAD tool will be presented.
This model is based in the VERILOG-A built in capabilities that offers QUCS Studio.
The technical background that is necessary to understand the equations and expressions that model the behavior of MESFET transistors can be found, in part, in the following paper:
An Angelov Large Signal Model and its Parameter Extraction Strategy for GaAs HEMT
Yan Wang Wenyuan Zhang
The paper is available in this link:
The file containing the brief explanation about the process of modelling can be found in this link:
The files that are described in the previous document can be accessed in this link: