In the present entry, an Angelov MESFET model built for the QUCS
Studio CAD tool will be presented.
This model is based in the VERILOG-A built in capabilities that
offers QUCS Studio.
The technical background that is necessary to understand the
equations and expressions that model the behavior of MESFET
transistors can be found, in part, in the following paper:
An
Angelov Large Signal Model and its Parameter Extraction Strategy for
GaAs HEMT
by
Yan
Wang Wenyuan Zhang
Tsinghua
University
The paper is available in this link:
The file containing the brief explanation about the process of modelling can be found in this link:
The files that are described in the previous document can be accessed in this link:
